Fraunhofer Institute for Photonic MicrosystemsDresden / November 03, 2026 - November 04, 2026
Silicon and Silicon-Germanium Epitaxy Users Meeting
An der Bartlake 5, 01109 Dresden, Germany
(Room: "Großer Zschirnstein")
Si and SiGe Epitaxy Users Meeting
November 3-4, 2026 (Dresden, Germany)
Silicon and Silicon-Germanium Epitaxy Users Meeting
Epitaxy - One of the most demanding processes in semiconductor manufacturing
Silicon and Silicon-Germanium Epitaxy Users Meeting (November 3-4, 2026)
The Silicon and Silicon-Germanium Epitaxy Users Meeting brings together professionals from across the semiconductor value chain—including industry experts, researchers, equipment manufacturers, and technology providers—to strengthen the Si, SiGe, and Ge epitaxy community.
The meeting serves as a dedicated platform for technical exchange, knowledge sharing, and collaboration. Participants will discuss the latest developments, emerging challenges, and innovative solutions across the entire epitaxy ecosystem, fostering new partnerships and advancing the state of the art in semiconductor manufacturing.
Key technical topics include:
- Epitaxial growth of Si, SiGe, and Ge
- Equipment technology and reactor design
- Process and device simulation
- Smart data analytics and digitalization
- Materials and substrate engineering
- Abatement, sustainable gas management, and safety
- In-situ and ex-situ metrology
Whether you are developing epitaxy equipment, optimizing manufacturing processes, advancing metrology solutions, or conducting research in epitaxial materials, this meeting provides an excellent opportunity to exchange ideas, discover innovations, and help shape the future of semiconductor epitaxy.
Participants of the Silicon and Silicon-Germanium Epitaxy Users Meeting 2025.
Agenda
Download the full agenda here.
- 03 November 2026: Technical Session (13:00 - 18:00)
- 04 November 2026: Technical Sessions (09:00–13:00)
Tuesday, Nov 03
| 12:30 | Arrival | |
| OPENING | ||
| 13:00 | Welcome and Introduction | Matthias Künle (Bosch) & Malte Czernohorsky (Fraunhofer IPMS) |
| BATCH EPITAXY PROCESSING | ||
| 13:20 | Si, SiGe and Ge Epitaxy at Fraunhofer ISE | Charlotte Weiss (Fraunhofer ISE) |
| 13:40 | Productivity and Quality Improvement in Batch Si/SiGe Epitaxy | Taku Kikuchi (Kokusai) |
| EPITAXY PROCESSES | ||
| 14:00 | A versatile deposition process for thick, highly in-situ-doped polycrystalline Silicon layers and their electrical and microstructural characterization | Elias Haar (Bosch) |
| 14:20 | Atomic-Layer Epitaxy Process for Advanced Group-IV Device Application | Yuji Yamamoto (IHP - Leibniz-Institut für innovative Mikroelektronik) |
| 14:40 | EPI chamber particle performance - Preprocessing conditions | Annekathrin Zeun (GlobalFoundries) |
| 15:00 | Coffee Break & Networking | |
| EPITAXY CONTAMINATION & DEFECTS | ||
| 15:30 | Unexpected Chamber Contamination: Restoring Lifetime with a New Clean | Terence Mittmann (Infineon) |
| 15:50 | Slip Lines Mitigation Strategy for ATM Si EPI | Stella Van Eek (Bosch) |
| METROLOGY & SIMULATION | ||
| 16:10 | In-situ epitaxy monitoring by pyrometry, reflectance and deflection analysis | Adrian Adrian (LayTec AG) |
| 16:30 | Modeling of thickness uniformity and interface sharpness in Si/SiGe epitaxy | Andrey Smirnov (STR) |
| 17:30 | End of Day 1 | |
| 19:00 | Evening Event @ Watzke am Goldenen Reiter | |
Wednesday, Nov 04
| 08:45 | Arrival | |
| OPENING DAY 2 | ||
| 09:00 | Wrap up day 1 | Marion Drießen (Fraunhofer ISE) & Olaf Fiedler (Infineon) |
| EPITAXY PROCESSES | ||
| 09:10 | Effect of HCl on Disilane-based Crystalline and Amorphous Si growth by Reduced-Pressure Chemical Vapor Deposition | Shohei Fukaya (IHP - Leibniz-Institut für innovative Mikroelektronik) |
| 09:30 | Sub-nm Ge Concentration Oscillations in Si/SiGe: MBE Growth and Characterization | Ivo Rahlff (Leibniz-Institut für Kristallzüchtung) |
| 09:50 | Initial Surface Reaction of Ge on Si adsorbed Ge Surface Formed by Atomic Layer Epitaxy | Kei Kiyose (IHP - Leibniz-Institut für innovative Mikroelektronik) |
| METROLOGY | ||
| 10:10 | Room Temperature Photoluminescence Detection of Defects on Si/SiGe Superlattice Samples | Andreas Nollau (Semilab Zrt.) |
| 10:30 | Advancing Epitaxial Layer Characterization with Dynamic SIMS: New Opportunities for Sensitivity and Depth Resolution | René Chemnitzer (CAMECA) |
| 10:50 | Coffee Break & Networking | |
| EPITAXY HARDWARE | ||
| 11:20 | Upgrading EPI Performance by Tuning Hardware Parts to Your Process Needs | Dino Alagic (Schunk Xycarb Technology) |
| 11:40 | Helios SiGe | Steve Burch (Helios Technical Services) |
| EPITAXY FACILITIES | ||
| 12:00 | Preventing exhaust line incidents in Si epitaxy: chemical analysis and safe handling of pyrophoric residues | Matthias Künle (Bosch) |
| CLOSING | ||
| 12:20 | Wrap up of Si and SiGe Epitaxy Users Meeting | |
| 13:00 | End of Day 2 | |
Registration & Contribution
Registration Closed
Registration for this event is now closed due to limited capacity. Thank you for your interest and understanding.