Devices

In the joint research project NEST (New Screening Tool for Efficient Semiconductor Manufacturing), Fraunhofer IPMS, Fraunhofer IZM, and DIVE Imaging Systems GmbH are working within the GreenICT@FMD competence center to make semiconductor production more efficient, cost-effective, and sustainable. The focus is on introducing hyperspectral imaging as an advanced screening tool for wafer inspection and process optimization.

Semiconductor production involves up to 1,500 complex process steps, including etching, deposition, and lithography, which require extremely rigorous quality control. Up to 50% of these steps are dedicated to metrology, and thousands of control wafers are used monthly. This leads to high resource consumption, increased CO₂ emissions, and added cost.

The NEST project revealed that targeted inspection technologies can significantly reduce the environmental footprint of chip manufacturing. In a 28 nm node with 25,000 wafer starts per month, the deployment of hyperspectral imaging could reduce control wafer usage by at least 25%, cutting CO₂ emissions by over 118,000 kg/month. Additional benefits include reduced water and chemical usage, minimized tool load, and increased wafer yield due to early defect detection.

Cleanroom-Ready Hyperspectral Inspection by DIVE and Fraunhofer IPMS

The DIVE VEpioneer® inspection system is the first of its kind to operate reliably in industrial cleanroom environments. It combines optical spectroscopy and AI-based image analysis to detect surface deviations and contamination within just 20 seconds, non-destructively and without halting production.

Fraunhofer IPMS provides critical expertise in cleanroom qualification and optical design, enabling the system’s integration into semiconductor fabs. Following the project's conclusion, the VEpioneer® remains in operation at the Fraunhofer IPMS Center Nanoelectronic Technologies (CNT) for continued evaluation and joint development efforts, including automation of wafer handling and real-time data integration.

Fraunhofer IPMS is part of the FAMES pilot line, a pilot line funded by the European Chips Act.

The FAMES pilot line is significantly advancing the development of energy-efficient chips for digital, analog, and high-frequency (RF) applications. The focus is on five pioneering technologies:

• FD-SOI platforms at 10 nm and 7 nm nodes to improve power efficiency and performance in advanced digital circuits
• A range of embedded non-volatile memory (eNVM) technologies, including OxRAM, FeRAM, MRAM, and FeFETs, for data retention in ultra-low-power systems
• High-frequency components such as RF switches, filters, and capacitors, supporting 5G, IoT, and edge computing applications
• Two innovative 3D integration approaches:
  • Heterogeneous integration for combining different chiplets and materials
  • Sequential integration to stack transistors layer-by-layer for higher density
• Integration of miniaturized inductors to enable compact and efficient DC-DC converters in power management ICs (PMICs)

These developments support a sustainable and competitive European semiconductor industry, enabling compact, high-performance, and energy-efficient electronics for future technologies.

Fraunhofer IPMS in the pilot line 

With the combined expertise of Fraunhofer IPMS and IZM-ASSID, we offer a unique environment for the development, integration, and characterization of novel storage materials and stacks on 300 mm wafers. Our goal: to significantly accelerate the path from material idea to functional memory solution. We focus on ferroelectric memory and compute-in-memory (CiM) accelerators.

Our focus areas: 

• Integration of hafnium dioxide (HfO₂) ferroelectrics
• Benchmarking and integration of nitride-based ferroelectrics
• Environmental assessment of highly integrated electronics
• Compute-in-Memory (CiM) accelerators

You can find more detailed information on our project website.

To promote sustainability in sensor technology, current research focuses on developing resource-saving manufacturing processes for ISFET-based pH sensors. Traditional materials like tantalum, though effective, are costly and critical in supply. The goal is to replace them with low-cost, energy-efficient alternatives offering comparable performance.

Key innovations 

• Bonding-free ISFET integration to eliminate rare metals like palladium and silver alloys
• Wafer-level sensor functionalization via micro-precision dispensing to reduce material waste
• Avoidance of flat coating processes, which cause over 99% material loss
• Reduced use of reactive and toxic substances, improving occupational safety and environmental compatibility

These advancements significantly lower production costs, minimize environmental impact, and support the development of next-generation eco-friendly semiconductor sensors.

Compact Evaluation Kit for Nb₂O₅-Based ISFETs

Fraunhofer IPMS offers a plug-and-play evaluation kit for Nb₂O₅-based ISFETs for pH sensing. The USB-C powered device enables easy testing with integrated reference electrode support and temperature compensation. A low-power analog variant is also available for battery-operated systems. Both options are compact, user-friendly, and optimized for accurate and efficient pH measurement.

Neuromorphic computing offers a breakthrough for energy-efficient and sustainable electronics. By mimicking the adaptive processes of the human brain, this technology enables ultra-low-power data processing, which is ideal for smart sensors, edge AI, and decentralized systems. It is particularly well-suited for future-oriented applications in Industry 4.0, smart cities, and autonomous mobility, where performance and efficiency must go hand in hand.

Fraunhofer IPMS: Experts in Neuromorphic Computing

Fraunhofer IPMS is a leading expert in neuromorphic hardware and materials. We are developing specialized materials, technologies and complete hardware solutions that are particularly optimized for use in the edge area - for example in intelligent sensors and decentralized systems that can process data and make decisions independently.

👉 Learn more by following the link in the blue box.

In an increasingly connected world, data demand is growing exponentially. To meet this challenge, the Glemoris project focuses on the development of reconfigurable intelligent surfaces (RIS) as a key technology for the next generation of wireless communications. This technology enables dynamic adaptation of signal transmission to significantly increase the efficiency and capacity of communication networks.

The main objective of the Glemoris project is to develop a novel, energy-efficient RF switch capable of meeting the signal transmission requirements of 6G networks. By using advanced CMOS technology and innovative design methods, we will maximize the energy efficiency of the components used while improving communication quality.

Key objectives:

1. Development of an energy-efficient RF switch: The aim is to reduce the switch's power consumption to less than 1 W while achieving high performance and fast switching times.
2. Integration of RF switches into RIS elements: The development of control algorithms for dynamic adjustment of signal transmission will increase the efficiency and flexibility of the system.
3. System testing and validation: Extensive testing in real-world scenarios will be conducted to demonstrate the performance of the developed technologies.

Fraunhofer IPMS: Extensive expertise in the development and characterization of integrated circuits (ICs), particularly in ultra-low power RF switches

Fraunhofer IPMS will lead the design and implementation of CMOS switches crucial for Reconfigurable Intelligent Surfaces (RIS), focusing on significantly reducing energy consumption while maintaining high performance. These innovative circuits will be optimized for 6G requirements, aiming to lower power consumption to under 1 W and achieve switching speeds of less than 1 µs.

The characterization will utilize advanced measurement techniques in-house, ensuring precise evaluation of performance parameters. Additionally, Fraunhofer IPMS will support the integration of these ICs into RIS modules, collaborating closely with partners in Taiwan to meet the project's technological objectives and lay the groundwork for future wireless communication applications.

5G and 6G communication will need synchronization, low-latency communication, and stable signal generation across multiple frequency bands in order to deliver the high data rates which are promised. Modern devices are a prerequisite, and Fraunhofer IPMS is researching innovative materials to meet these requirements.

This is why Fraunhofer IPMS is developing innovative high-frequency components based on ferroelectric hafnium oxide (HfO₂). The aim is to create integrated varactors that can be embedded in modern RF-CMOS systems and enable analog modulation of high-frequency signals. These novel components are intended to help make wireless communication technologies such as 5G and 6G significantly more powerful and energy-efficient.

Fraunhofer IPMS: Experts in innovative ferroelectric hafnium oxide (HfO₂)

Fraunhofer IPMS is developing and validating devices based on ferroelectric thin-film hafnium oxide varactors. The main areas of focus are chip design, BEoL integration, characterization and system integration. Our goal is to advance to integrated chip systems with a maturity level of TRL 5.

The use of ferroelectric hafnium oxide enables greater energy efficiency to be achieved. The components are miniaturized and less susceptible to temperature fluctuations. Increased linearity in tuning also leads to significant advances in component architecture. Since they can also be manufactured using CMOS technology, which is the industrial standard in microelectronics manufacturing, the result is ideal scalability and cost efficiency.