Memory Technology

With the Center Nanoelectronic Technologies (CNT), Fraunhofer IPMS conducts applied research on 300 mm wafers for microchip producers, suppliers, equipment manufacturers and R&D partners. Research continues on topics such as 300 mm technology modules, test chips, energy storage and next generation memory technology. In this section you will find information on memory technology.

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Ferroelectric RAM (FRAM)

Ferroelectric Field Effect Transistor (FeFET)

Magnetoresistive RAM (MRAM)

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Ferroelectric Field Effect Transistor (FeFET) Memory Concept