Memory Technology

With the Center Nanoelectronic Technologies (CNT), Fraunhofer IPMS conducts applied research on 300 mm wafers for microchip producers, suppliers, equipment manufacturers and R&D partners. Research continues on topics such as 300 mm technology modules, test chips, energy storage and next generation memory technology. In this section you will find information on memory technology.

Please select:

Ferroelectric RAM (FRAM)

Ferroelectric Field Effect Transistor (FeFET)

Magnetoresistive RAM (MRAM)




Modular high-throughput microplatform for future synthetic biology mass data repositories.