Integrated Data Memory
Data is the foundation of modern digital industries. From AI and edge computing to industrial automation, the demand for fast, scalable, and energy-efficient non-volatile memory continues to grow. Today, most data is stored as magnetic bits in hard disk drives—an established technology developed more than 50 years ago. However, conventional storage solutions are reaching fundamental scaling and performance limits, restricting further increases in storage density, speed, and power efficiency.
Magnetic Random Access Memory (MRAM) is one of the most promising next-generation memory technologies. Built on advances in spintronics, MRAM stores information using the electron’s spin instead of charge alone. This enables:
In addition to MRAM, concepts such as Racetrack Memory (RTM) demonstrate how spin-based devices can enable ultra-high-density storage architectures.
A key technological challenge in spin-based memory systems is the efficient charge-to-spin and spin-to-charge conversion. These processes are driven by spin-orbit coupling effects and are essential for spin-orbit torque (SOT) MRAM and racetrack memory devices.
Materials with high spin Hall angles are critical to reduce switching currents and enable low-power MRAM devices. Research into advanced materials and optimized layer stacks is therefore central to improving device performance and scalability.
Our research focuses on bridging fundamental spintronics with industrial semiconductor manufacturing. We investigate:
We fabricate and characterize single MRAM cells and nanoscale device arrays using established semiconductor materials and processes. By studying scaling behavior at technologically relevant dimensions, we identify fundamental obstacles and develop strategies to overcome them.
MRAM is considered a key candidate for:
By advancing scalable spintronic memory technologies, we contribute to the development of robust, high-performance, and manufacturable next-generation non-volatile memory solutions.
We work closely with Fraunhofer ENAS to fully utilise the diverse possibilities of spintronics in various application areas. While we focus on the development of advanced magnetic memory concepts, Fraunhofer ENAS is driving research in the field of highly sensitive magnetic field sensors.
This strategic cooperation is based on a joint clean room concept that allows us to optimally utilise our complementary strengths. For example, at Fraunhofer ENAS, process technology can be mapped on up to 200 mm wafers, while we specialize in the processing of 300 mm wafers. By having access to the state-of-the-art clean rooms of both institutes, we can process customer enquiries even more specifically and efficiently. Our partners and customers benefit from the combined expertise in this specialist field and customised solutions.
In addition, both institutes will work closely together on research into RF devices, another exciting area of application for spintronics. This joint research work enables us to develop innovative solutions for future wireless communication systems. By combining our strengths in sensor technology, memory technology and RF devices, we offer comprehensive expertise and unique solutions.
Fraunhofer Institute for Photonic Microsystems