Wafer Services

Silicon based layer

• SiO₂ (thermal or chemical formed oxide)
• Silicon oxide and silicon nitride (PECVD), TEOS-SiO₂
• Organo silicate glass (SiCOH/ULK) [porous]
• Silicon-Germanium (SiGe)
• Doped amorphous Si and poly Si (P, B)
• Epitaxial processes on request

Metals

• PVD: Ta(N), Ti(N), Cu
• CVD: Co
• ECD: Co, Cu
• More material upon request

ALD based oxides and nitrides

• Al₂O₃
• HfO₂ (doped)
• ZrO₂
• More materials upon request

Test Structures for various Processes at ≤ 28 nm Technology Node 

• CMP | Plating | Cleaning
• Thin films | STI

Test Structures for functional Layers

• Memory applications
• Ferroelectric stack deposition
• MIS/MIM structures

Custom Layout Implementation / E-Beam Lithography Nanopatterning

• Complementary Mix & Match
• Small volume series
• more information here!

Test Structures for BEOL / Wafel Level Packaging (IZM-ASSID)

• TSV Test Wafers (via middle, via last)
• Si Interposer with Cu-TSV
• Fine pitch flip Interconnects
• Teships for chip-to-wafer / chip-to-chip / chip-to-substrate bonding

Silicon based layer

• SiO₂ (thermal or chemical formed oxide)
• Silicon oxide and silicon nitride (PECVD), TEOS-SiO₂
• Organo silicate glass (SiCOH/ULK) [porous]
• Silicon-Germanium (SiGe)
• Doped amorphous Si and poly Si (P, B)
• Epitaxial processes on request

Metals

• PVD: Ta(N), Ti(N), Cu
• CVD: Co
• ECD: Co, Cu
• More material upon request

ALD based oxides and nitrides

• Al₂O₃
• HfO₂ (doped)
• ZrO₂
• More materials upon request

• Layer thickness and uniformity (4-point probing, ellipsometry, XRR, high res. profi lometry)
• Film morphology and structure (AFM [3D], XRD, surface inspection, SEM)
• Chemical composition & contamination (XPS, REELS, ICP-MS)
• Patterned defect inspection
• Electrochemical monitoring of electrolyte solutions and additives (CVS, LP, EIS, etc.)
• Electrical characterization of functional layers and layer stacks 
• (Semi-automatic probing)

Defect inspection for patterned and unpatterned wafers is an essential technique for monitoring wafer quality throughout semiconductor manufacturing. It focuses on the detection and classification of particles, scratches, surface irregularities and pattern defects on the wafer front side. These methods enable the localization, classification, and statistical evaluation of critical defects, supporting process optimization, yield improvement, and root cause analysis.

Capabilities

• Defect inspection for patterned and unpatterned wafers
• Detection of defect sizes down to 100 nm on 200 mm wafers and 50 nm on 300 mm wafers
• Defect review using optical microscopy and Review SEM with integrated FIB

Tools

• KLA Surfscan 6220 (200 mm)
• KLA Surfscan SP3 (300 mm)
• Applied Materials Compass (200 mm)
• NextIn Solutions AEGIS (300 mm)
• Leica INS3000 (200 mm)
• Applied Materials G3E FIB
• Applied Material Reveal (200 mm, 300 mm)

Physical and chemical characterization of full wafers with high throughput without affecting the functionality of the wafer dies is a key to monitor the production of semiconductor devices. At Fraunhofer IPMS we have a number of different in-line metrology tools for the measurement of film thicknesses, sheet resistance, surface composition, chemical binding states, surface and sidewall topographies and for defect inspection on 200 and 300 mm wafers.

Capabilities

• Surface composition wafer-mapping (Thermo Fisher Theta300i ARXPS)
• Profilometry and 3D-AFM (KLA Tencor HRP340 & Bruker Nano X3D)
• XRD (Bede HR, video system, micro focus X-ray tube)
• Critical Dimension: AMAT Verity CD SEM
• Film thickness wafer-mapping (KLA Tencor Spectra FX100)
• Sheet resistivity (EURIS WS3000 & KLA Tencor RS100)
• Defect Inspection and Review

Tools

• Thermo Fisher Theta300i ARXPS)
• KLA Tencor HRP340 & Bruker Nano X3D
• Bede HR, video system, micro focus X-ray tube
• AMAT Verity CD SEM
• KLA Tencor Spectra FX100
• EURIS WS3000 & KLA Tencor RS100

Fraunhofer IPMS has a dedicated lab for ultratrace elemental analysis for Wafer Contamination monitoring via VPD-ICP-MS (vapor phase decomposition combined with inductively coupled plasma mass spectrometry). After etching the 200 mm or 300 mm wafer with HF (hydrofluoric acid) vapor, a droplet is placed on the wafer and moved over its surface. This collected droplet is then filled up to 1 mL and measured using ICP-MS. This provides quantitative information of dissolvable elements on the wafer surface.

Capabilities

We offer surface and bevel scans using HF scan solution to analyze 39 elements. Furthermore Aqua regia scan solution can be utilized for 5 noble metals. 

Tools

• VPD sample preparation tool WSPS2 from PVA Tepla 
• Mass spectrometer iCap RQ from Thermo Scientific