Project: SMut – System for Material Analysis and Thin-Film Characterization

SMut – Platform for Material Investigation and Thin-Film Characterization

Project duration: 10/2025 – 09/2027

© Fraunhofer IPMS
Wafer with isolated OFET substrates.

In-situ Thin-Film Characterization for Material and Device Development

The project is developing a platform-based in-situ characterization system for thin films, enabling reliable measurement of electrical, thermal, and prospectively optical properties—both under inert conditions and in ambient air.

The target audience includes research institutions, materials developers, and device designers who need to efficiently analyze long-term stability, atmospheric effects, and process parameters. A modular setup, specialized test substrates, and automated software allow for fast, standardized, and material-conserving measurements.

Motivation: New materials for OLEDs, OPVs, gas sensors, and wearables form the foundation for more powerful and innovative products.

Challenges: Thin-film processes are time- and cost-intensive, materials are often air-sensitive, and only available in minimal quantities. This platform therefore enables efficient handling, allowing material properties to be evaluated and product development to be accelerated.

Development of a mobile, encapsulated carrier system for sample modules with reversible integration into a glovebox (illustrative image).

Mobile Sample Module Carrier for Flexible Atmospheric Conditions

The core of the system is a mobile, encapsulated sample module carrier, which can be reversibly installed in a glovebox and also operated outside inert conditions. It enables contacted measurements under vacuum, inert gas, or air and allows controlled atmospheric changes.

  • Contacted measurements under vacuum and inert gas conditions
  • Exposure to air and variable atmospheres
  • Integrated temperature control (e.g., Peltier element)
  • Flexible accommodation of different test substrates

The modular design allows easy transfer between processing and measurement environments and can be integrated into existing setups.

Test Substrates for Precise Electrical Characterization

In addition, specialized test substrates are being developed for the electrical evaluation of functional materials. The goal is to determine key performance parameters as a function of layout and material system.

  • Electrical conductivity
  • Contact resistances
  • Charge carrier mobility
  • Influence of channel length and width

Variable gate, source, and drain geometries, as well as different contact materials and gate oxides (e.g., SiO₂, Ta₂O₅, Nb₂O₅, HfO₂), enable systematic material and layout analysis under reproducible conditions.

Automated Measurement Software and Data Analysis

A container-based software environment ensures reproducibility and comparability of measurement results. Measurement procedures are automated, relevant parameters are calculated automatically, and results are graphically processed.

  • Automated measurement and evaluation processes
  • Reduced operator input
  • Comparison of process parameters
  • Configurable for different measurement setups

This approach shortens development cycles and ensures stable, valid measurement processes.

Tasks and Work Packages of Fraunhofer IPMS

© Fraunhofer IPMS
OFET substrate with four electrode designs and orientations, as well as two gate contacts.

Fraunhofer IPMS develops R&D test substrates for electrical material and thin-film characterization. These substrates enable precise measurement of transistor characteristics and the derivation of relevant parameters, for example, to assess the influence of analyte gases on electrical behavior. With over 20 years of experience in OFET substrates and established silicon-based microtechnology, the institute is well recognized in both research and industry.

Design and Substrate Concepts

Predefined and custom layouts are optimized for accurate measurements. The gate oxide thickness is variable (28–320 nm), and a single chip can include different electrode geometries with varying channel widths and lengths to analyze layout and scaling effects.

Deposition and Process Versatility

The substrates can be coated using processes such as CVD, spin coating, spray coating, or ALD. High reproducibility of electrode structures and varied transistor orientations allow for a systematic investigation of process-related effects.

Simple and Reproducible Measurement

The bottom-gate substrates feature low gate leakage currents in the pA range and are easy to contact. Probe and temperature processes are available, enabling reproducible measurements and the analysis of material stability over extended periods.

Funded by:

 

Projektnummer: SAB TG70

 

Projektnummer: SAB TG70

Further information:

Components and Systems

Organic Field-Effect Transistors (OFETs)

Brochure

OFET and LOFET for Characterization of Semiconductor Materials

Data sheet

OFET Measurement Adapter 8T1G

Electrical characterization of materials

Data sheet

OFET and LOFET Standard Substrate

Substrates for Material Characterization