Fraunhofer-Institut für Photonische MikrosystemeDry Etch - (Deep) Reactive Ion Etching
RIE of
- Oxides
- Metals
- Silicon
RIE of Membranes
- TiAl
DRIE of silicon
- Aspect ratio up to 40
- Side wall angle 90° ± 1°
Dry Etch
Increased device performance and reliability in VLSI and ULSI silicon circuit technologies.
Trockenätzen
Screening Fab Services
Deep silicon etching
Silicon deep etching (Bosch process) is one of the core competencies in our clean room at Fraunhofer IPMS. This highly precise and repeatable etching process enables the fabrication of deep, anisotropic structures in silicon substrates, which are essential for a variety of applications in micro- and nanotechnology.
Our state-of-the-art equipment and experienced team ensure that the most complex designs are realized with the highest accuracy and consistency.