Reinraum-Infrastruktur

Die Kompetenzen der CNT-Abteilung konzentrieren sich auf Next Generation Computing, Geräte für das Internet der Dinge und die Untersuchung von Prozessen und Materialien für die 300-mm-Halbleiterfertigung. Es stehen mehr als 100 Prozess- und Analysewerkzeuge für hauptsächlich 300-mm-Wafer zur Verfügung. Dank eines 4000 m² großen Reinraums sowie Labors für Analytik und elektrische Charakterisierung, die den neuesten Industriestandards entsprechen, können Entwicklungen und neue Prozesse schnell in die Produktionslinien unserer Partner integriert werden.

Ätzen

Etch	TEL Tactras	AMAT Centura			AMAT Centura
Chamber	Vigus LK3 HC	Enabler	Axiom	AdvantEdge G3	Enabler	AdvantEdge G5	AdvantEdge G5	Mariana
Details	ALE, RF pulsing	large variability in gases		large variability in gases	large variability in gases	high T 250°C, RF pulsing		narrow gap CCP
Materials	dielectrics (low-k, ULK, oxides, nitrides)	dielectrics (low-k, oxides, nitrides), ash	ash	metals (TiN, Ti, Al, AlSiCu, W), high-k (HfOx, ZrOx)	dielectrics (high AR oxides, nitrides), ash	high-k and gate stack (HfOx, ZrOx, AlOx, TiN)	fine pitch Si etch	Si deep trench
Contamination class	BEOL	BEOL			FEOL

Nassätzen / Waferreinigung

Clean Wet Etch	AMAT/Semitool Raider			Screen SU-3200			Screen FC-3000
Chamber	water/acid	UV-cure	coating	BEOL Spray	FEOL Spray	Bevel	recirculated bath	PoU bath	Marangoni Dry
Details	spray, center dispense, backside, (megasonic) bath	up to 1000°C	dispense	10–80 °C, front & back side	10–80 °C, front & back side	bevel and backside clean	recirculated up to 120°C, megasonic	point of use up to 65°C, megasonic	incl. HF last
Materials	(d)HF, (hot)DI, custom water/acid chemicals		custom chemicals	(u)dHF, SC1, CO2W, (h)DIW, 2x custom, solvent	(u)dHF, SC1, SC2, SPM, (h)DIW, DI-O3 , Solvent	dHF, (h)DIW, SC1, Solvent	SPM, SC1	SC1, (d)HF, HCL	IPA
Contamination class	BEOL			BEOL / FEOL			FEOL

Chemische Gasphasenabscheidung (CVD)

CVD	AMAT Producer			AMAT Endura	ASM XP8-Dragon		ASM A412
chamber	Black Diamond	BLOk / Precision APF	Nanocure 3 UV-Cure	Volta	TEOS	Silan	LPCVD reactor
details	PECVD, twin chamber 300°C–550°C	PECVD, twin chamber 300°C–550°C	twin chamber	MOCVD (CCTBA, CoCo), in-vacuo XPS, IR lamp anneal	PECVD, twin chamber	PECVD, twin chamber	50 wafer batch
materials	low-k, ULK, SiCOH, OMCTS, BDx	SiCN, SiN, SiO2 , carbon HM		Co	SiO2	SiN, SiO2	polySi, SiGe poly & Epi, a-Si, insitu B and P doping
contamination class	BEOL			BEOL	BEOL / FEOL		FEOL

Atomlagenabscheidung (ALD)

ALD	ASM XP4		Jusung Eureka		ASM A412	AMAT Endura
chamber	EmerALD	Pulsar	ALD	ALD	LPCVD reactor	ALD
details	PEALD 50°C–350°C	thermal ALD 200°C–350°C	thermal ALD 200–400°C	thermal ALD 200–400°C	ALD/CVD	th. ALD 200–350°C
materials	SiO	HfO, ZrO, AlO	HfO, AlO, other	ZrO, AlO, other	TiN	Ta3 N5 (PDMAT)
contamination class	FEOL		FEOL		FEOL	BEOL

Anneal

Anneal	TEL Formula	Mattson Helios XP
Specifics	Cu Anneal 100–400°C	RTP 250–1200°C
Gases, application	N2 , H2 , Ar, VAC	O2 , Ar, H2 , N2 O, N2	Silicidation, RTO, RTA
Contamination class	BEOL	FEOL

Physikalische Gasphasenabscheidung (PVD)

PVD	AMAT Endura		AMAT Endura
Chamber	ACCESS II	EnCoRe II	Clover	Clover MgO	Clover	Clover
Details	PVD: ultra long range sputter, SIP; 3 EM, biased collimator; Cu-Backetch option with high rf bias up to 1kW, in-vacuo XPS	PVD: SIP; Ar-Backetch option with high rf bias >1kW, in-vacuo XPS	PVD: DC, pDC & Rf; up to 450°C; Cosputter	PVD: RF; superb uniformity, sub-nm layers {for all Clover}	PVD: DC up to 5 targets	PVD: DC up to 5 targets
Materials	Cu	Ta, TaN, Ti, TiN	HfOx, Ti, TiN, Si	upon request	upon request	upon request
Contamination class	BEOL		FEOL	MRAM

Chemisch-mechanisches Polieren (CMP)

CMP	AMAT Reflexion LK
Auxillary systems	flexible liquid supply system (4x platen feed; 2x cleaner feed), slurry analysis (Malvern Zetasizer; SITA DynTester+)
Process	Metalization/Damascene	Oxide/STI
Endpoint systems	Eddy-Current, optical (fixed wavelength), motor torque	optical (white light spectrometer), motor torque
Materials	Cu, Co, Ta/TaN, TEOS, ULK	SiO2 (TEOS/HARP/HDP), Si3 N4 , SiGe
Contamination class	BEOL / FEOL

Lithografie

Litho	Vistec SB3050 (shaped beam)	TEL Track (ACT12)	Brewer Science
Substrates	150/200/300 mm substrates	full automatic 300 mm wafer coating / developing	stand alone coater & developer, 100, 200 mm substrates
Details, specifications	CD dense line/vias: <40 nm; iso line/vias: <20 nm; overlay: <20 nm	ca. 80 nm nCAR, ca. 60 nm/ 120 nm/ 480 nm pCAR, 1 µm iLine resist
Contamination class	BEOL / FEOL	BEOL / FEOL	BEOL / FEOL

Elektrochemische Abscheidung (ECD)

ECD

AMAT / Semitool Raider ECD

Lam Sabre Extreme

Chambers & processes

Cu Damascene,

Co Damascene

Post Clean, Bevel Etch, Anneal

Cu Damascene,
Cu TSV

Cu RDL, Pillar, Bump

Pre Wet

Post Clean, Bevel Etch, Anneal

Contamination class

BEOL

BEOL / BE (UC)

Metrologie

Metrology
Tool name & supplier	Details
KLA SP2	Surface scan particle measurement
KLA SP3	Surface scan particle measurement
KLA RS100	4-point probe resistance measurement
Nextin AEGIS	patterned defect inspection, bright and darkfield
AMAT Verity 4i	CD-SEM
Veeco 3D-AFM	In line AFM with trench capability and charge compensation
KLA Spectra FX100	film thickness and uniformity, wafer bow
XPS from Nova and Thermo Fisher	With Al-Anode → Sputter depth and angle resolved profiling
AMAT CD-SEM	CD-SEM measurements
AMAT G3i Review SEM	EDX and FIB capability and tilted stage
KLA HRP340	Several needles and 3d option
XRR/XRD from Bede (Bruker)	Thickness measurement, Material properties (roughness, density, cryst. structure, texture)
KLA Optical Microscope	optical inspection

Analytik

Analytics
Tool name & supplier	Details
ToF-SIMS.5 from iontof	Cs and O gun
AFM Cypher from Oxford instruments	Additional piezo, response mode
XPS Quantes from Phi	with Al and additional Cr (HAXPES), Sample heating and cooling, imaging mode
XRR/XRD D8 Discover from Bruker	thickness, material properties, HighTemperature option
SEM ApreoS from ThermoFisher, SEM S5000 from Hitachi	equipped with electron diffraction for transmission (TKD) and backscattering (EBSD) and EDX
FIB/SEM Strata 400 from FEI	Dual beam, GIS: C and Pt, EDX
FIB Helios 5 UC from ThermoFisher	GIS: W and C, delayering, low k etch, EDX up to Li, Raith Multibeam
Axio Imager A2 Vario from Zeiss	up to full 300 mm wafer mapping, BF, DF, C-DIC
TEM Tecnai F20 from FEI	200 kV, energy filter (EFTEM, EELS) and EDX
InVia µRaman Microscope from Renishaw	composition analysis, stress measurement
TXRF S2 from Picofox	elemental analysis

Elektrische Charakterisierung

Electrical Characterization
Equipment	Details
Wafer probing stations
TEL Automatic wafer probers 200/300 mm	lab and inline
FormFactor/Süss Microtec Semiautomatic wafer probers	couponlevel upto 300 mm, -60°C … 300°C, nitrogen purging possible
Imina MiBot system	SEM in-situ probing solution, nano-probing
Cryogenic Probestation „Quantum Design Opticool“	T <2K, H-Field <7T
Cryogenic Probestation „Bluehors” Dilution refrigerator	<30mK
Cryogenic Probestation „Kiutra L-Type Rapid“	<100mK, H-Field <5T
Test equipment
Keysight Semiconductor Parameter Analyzers	CV/IV device char., NVM char., device reliability
Keysight Vector Network Analyzer	RF IV, loadpull, parameter measurement up to 170 GHz
ProPlus FlickerNoise characterization and AdMOS FlickerNoise characterization system	flicker noise, 1/f noise, RTN char.
NI PXIe Systems optimized for Mixed- Signal Test	NVM array characterization
KLA/Capres CIPT	char. of magnetoresistance / tunneling resistance on MTJ stacks

300 mm Reinraum-Infrastruktur

300 mm Prozesskatalog