Reinraum-Infrastruktur

Die Kompetenzen der CNT-Abteilung konzentrieren sich auf Next Generation Computing, Geräte für das Internet der Dinge und die Untersuchung von Prozessen und Materialien für die 300-mm-Halbleiterfertigung. Es stehen mehr als 100 Prozess- und Analysewerkzeuge für hauptsächlich 300-mm-Wafer zur Verfügung. Dank eines 4000 m² großen Reinraums sowie Labors für Analytik und elektrische Charakterisierung, die den neuesten Industriestandards entsprechen, können Entwicklungen und neue Prozesse schnell in die Produktionslinien unserer Partner integriert werden.

Etch

Etch	TEL Tactras	AMAT Centura			AMAT Centura
Chamber	Vigus LK3 HC	Enabler	Axiom	AdvantEdge G3	Enabler	AdvantEdge G5	AdvantEdge G5	Mariana
Details	ALE, RF pulsing	Large variability in gases	remote Plasma	Large variability in gases	Large variability in gases	High T 250°C, RF pulsing	Atomic layer etch, ALE	Narrow gap CCP
Materials	Dielectrics (low-k, ULK, oxides, nitrides)	Dielectrics (low-k, oxides, nitrides), ash	Ash	Metals (TiN, Ti, Al, AlSiCu, W), high-k (HfO_x, ZrO_x)	Dielectrics (high AR oxides, nitrides), ash	High-k and gate stack (HfOx, ZrOx, AlOx, TiN)	Fine pitch Si etch	Si deep trench
Contamination class	BEOL	BEOL			FEOL

Clean Wet Etch

Clean Wet Etch	AMAT/Semitool Raider			Screen SU-3200			Screen FC-3000
Chamber	Water/acid	Solvent	Coating	BEOL dispense	FEOL dispense	Bevel Edge	Recirculated bath	PoU bath	Marangoni Dry
Details	Spray, center dispense, backside, (megasonic) bath		Dispense	10–80 °C	10–80 °C	Bevel and backside clean	Recirculated up to 20°C, megasonic	Point of use up to 65°C, megasonic	Incl. HF last
Materials	(d)HF, DI, acids	DI, custom solvent	Custom chemicals	(u)dHF, SC1, CO2W, (h)DIW, 2x custom, solvent	(u)dHF, SC1, SC2, SPM, (h)DIW, DI-O3, solvent, IPA	dHF, (h)DIW, SC1, solvent	SPM, SC1	SC1, (d)HF, HCL	IPA
Contamination class	BEOL			BEOL / FEOL			FEOL

Chemical Vapor Deposition (CVD)

CVD	AMAT Producer			AMAT Endura	ASM XP8-Dragon		ASM A412
Chamber	Black Diamond	BLOk / Precision APF	Nanocure 3 UV-Cure	Volta	TEOS	Silan	LPCVD reactor
Details	PECVD, twin chamber 300°C–550°C	PECVD, twin chamber 300°C–550°C	twin chamber	MOCVD (CCTBA, CoCo), in-vacuo XPS, IR lamp anneal	PECVD, twin chamber	PECVD, twin chamber	50 wafer batch, Anneals in N2 + H2 ambience until 800°C
Materials	low-k, ULK (Black Diamond 1, Black Diamond 2), SiCOH, OMCTS, BDx	SiCN, SiN, SiO₂ , carbon HM		Co	SiO₂	SiN, SiO₂	polySi, Ge poly, SiGe poly & Epi, a-Si, insitu B and P doping, TiN
Contamination class	BEOL / FEOL			BEOL	BEOL / FEOL		FEOL

Atomic Layer Deposition (ALD)

ALD	ASM XP4		ASM A412	AMAT Endura
Chamber	EmerALD	Pulsar	LPCVD reactor	ALD
Details	PEALD 50°C–350°C	Thermal ALD 200°C–350°C	ALD/CVD	th. ALD 200–350°C
Materials	SiO₂, TiN	HfO₂, ZrO₂, AI2O₃, Si-doping, Ta₂O₅, La-doping	TiN	Ta₃ N₅ (PDMAT)
Contamination class	FEOL		FEOL	BEOL

Anneal

Anneal	TEL Formula	Mattson Helios XP
Specifics	Cu Anneal 100–400°C	RTP 250–1200°C
Gases	N2 , H2 , Ar, VAC	O₂ , Ar, H₂ , N₂ O, N₂
Application		Implant Activation, Doped Poly Activation, Silicidation, HfO₂ Crystallization, Surface nitridation, SION and ONO Interface Formation, RTO (Rapid Thermal Oxidation), Densification of PECVD Oxides
Contamination class	BEOL	FEOL

Physical Vapor Deposition (PVD)

PVD	AMAT Endura		AMAT Endura				Polyteknik Flextura 300
Chamber	ACCESS II	EnCoRe II	Clover	Clover MgO	Clover	Clover	Confocal Sputter Module	Effusion Cell Module
Details	PVD: ultra long range sputter, SIP; 3 EM, biased collimator; Cu-Backetch option with high rf bias up to 1kW, in-vacuo XPS	PVD: SIP; Ar-Backetch option with high rf bias >1kW, in-vacuo XPS	PVD: DC, pDC & Rf; up to 450°C; Cosputter	PVD: RF; superb uniformity, sub-nm layers {for all Clover}	PVD: DC up to 5 targets	PVD: DC up to 5 targets	PVD: DC & pDC; 4 targets; up to 1000°C; Cosputter	Thermal evaporation; 3 effusion cells; up to 500°C substrate temperature
Materials	Cu	Ta, TaN	Hf, HfO_x, Zr, ZrN, ZrO_x, Ti, TiN, TiO_x, Si, SiO_x, Co	MgO	CoFeB, CoFe, (Mo, W on request)	Ni, Co, Pt, Ru, Ta	Ti, TiN, Al, AlO_x, AlN, Zr, ZrN, Nb, NbN	Ti
Contamination class	BEOL		FEOL	MRAM			BEOL

Chemical Mechanical Polishing (CMP)

CMP	AMAT Reflexion LK
Auxillary systems	Flexible liquid supply system (4x platen feed; 2x cleaner feed), slurry analysis (Malvern Zetasizer; SITA DynTester+), pad/conditioner analysis (Nanofocus mobil confocal microscope)
Consumable screening (service)	Evualation & screen von CMP consumables (slurry, cleaning, pad, conditioner, …)
Process	Metalization/Damascene	Oxide/STI
Endpoint systems	Eddy-Current, optical (fixed wavelength), motor torque	Optical (white light spectrometer), motor torque
Materials	Cu, Co, Ta/TaN, TEOS, Ti/TiN, SiCOH, ULK	SiO₂ (TEOS/HARP/HDP), Si₃N₄ , SiGe
Contamination class	BEOL / FEOL

Lithography

Lithographie	Vistec SB3050 Electron-beam lithography system	Nikon NSR-210D KrF DUV Scanner	TEL ACT12 Clean Track 12" Coater and developer	EVG 150 12" Coater and developer	Amcoss AMC1000 8" Coater and developer	Brewer Science Cee™ 100FX & Cee™ 200FX Manual coating and developing	Brewer Science 1100FX Manual hot and cool plates	AMAT Verity 4i & Verity 6 CD-SEM	MueTec DaVinci 300OVL CD/Overlay Metrology System
Substrates	150/200/300 mm wafer	300 mm wafer	Full automatic 300 mm wafer coating and developing	Full automatic 300 mm wafer coating and developing	Full automatic 200 mm wafer coating and developing	Up to 300 mm wafer size	Up to 300 mm wafer size	200/300 mm wafer	200/300 mm wafer
Details, specifications	Resolution CD: dense LS <40 nm, iso LS: <20 nm, overlay: <50 nm, based on the Variable Shaped Beam (VSB) technology, 50 kV electron optics	ResolutionCD: L/S + Isolated Line ≤ 110 nm, Vias ≤ 150 nm, CDU: (3σ) ≤ 4 nm (L/S + Isolated Line + Vias), DOF @ 20% Range: ≤ 350 nm (L/S), ≤ 250 nm (Isolated Line), ≤ 220 nm (Vias), Stepping Precision (3σ): ≤ 4 nm Single Machine, Overlay (3σ): ≤ 4 nm, NA 0,55 - 0,82	Rotation speed up to 2500 rpm, FT uniformity 1nm 3 Sigma, Throughput >30 wafers per hour High-precision baking, Developer HMDS, Inline FT monitoring	Rotation speed up to 2500 rpm, FT uniformity 3 Sigma ≤ 1%, Throughput >30 wafers per hour, Developer HMDS, Inline FT monitoring	Rotation speed up to 3000 rpm, FT uniformity 3 Sigma ≤ 3%, Throughput <10 wafers per hour, Developer HMDS	Typical spin speeds for uniform (1%) films are between 1,000 to 2,000 rpm	50°C...300°C	CD dense line/vias: <40 nm; iso line/vias: <20 nm; overlay: <20 nm	Total measurement

Electrochemical Deposition (ECD)

ECD	AMAT Raider Edge ECD		Lam Sabre Extreme
Chambers & processes	Cu Damascene, Co Damascene	Post Clean, Bevel Etch, Anneal	Cu Damascene, Cu TSV	Cu RDL, Pillar, Bump Pre Wet	Post Clean, Bevel Etch, Anneal
Materials	Cu, Co, In		Cu
Contamination class	BEOL		BEOL / BE (UC)

Metrology

Metrology
Supplier & tool name	Details
KLA SP2	Surface scan particle measurement
KLA SP3	Surface scan particle measurement
KLA RS100	4-point probe resistance measurement
Nextin AEGIS	Patterned defect inspection, bright and darkfield
KLA Spectra FX100	Film thickness and uniformity, wafer bow
Revera XPS	With Al-Anode ➔ sputter depth and angle resolved profiling
Thermo Fisher XPS	With Al-Anode ➔ sputter depth and angle resolved profiling
AMAT G3i Review SEM	EDX and FIB capability and tilted stage
AMAT Reveal	EDX and FIB capability and tilted stage
KLA HRP340	Several needles and 3d option
XRR/XRD from Bede (Bruker)	Thickness measurement, material properties (roughness, density, cryst. structure, texture)
KLA Optical Microscope	Optical inspection
Leica Inline Optical Microscope	Inline optical inspection
Parksystems Inline AFM	Inline AFM

Analytics

Analytics
Supplier & tool name	Details
IONTOF ToF-SIMS 5	Cs and O gun
Oxford Instruments AFM Cypher	Additional piezo, response mode
Phi XPS Quantes	With Al and additional Cr (HAXPES), Sample heating and cooling, imaging mode
Bede (Bruker) XRR/XRD D8 Discover	thickness, material properties, high temperature option
Thermo Fisher SEM Apreo S	equipped with electron diffraction for transmission (TKD) and backscattering (EBSD) and EDX
Hitachi SEM S5000	equipped with electron diffraction for transmission (TKD) and backscattering (EBSD) and EDX
FEI FIB/SEM Strata 400	Dual beam, GIS: C and Pt, EDX
Thermo Fisher FIB Helios 5 UC	GIS: W and C, delayering, low k etch, EDX up to Li, Raith Multibeam
Zeiss Axio Imager A2 Vario	up to full 300 mm wafer mapping, BF, DF, C-DIC
FEI TEM Tecnai F20	200 kV, energy filter (EFTEM, EELS) and EDX
Renishaw InVia μRaman Microscope	Composition analysis, stress measurement
Picofox TXRF S2	Elemental analysis
PVA TePla WSPS2, Thermo Fisher ICAP RQ	VPD-ICP-MS ultra trace analysis, HF and AR method, Bevel also possible

Electrical Characterization

Electrical characterization
Equipment	Details
Wafer probing stations
TEL Automatic wafer probers 200/300 mm	Lab and inline, -40°C ... 200°C
FormFactor/SüssMicrotec Semiautomatic wafer probers / MPI Semiautomatic wafer prober	Couponlevel upto 300 mm, -60°C ... 300°C, nitrogen purging possible
Imina MiBot system	SEM in-situ probing solution, nano-probing
Cryogenic Probestation „Quantum Design Opticool“	T < 2K, H-Field < 7T
Cryogenic Probestation „Bluefors“ Dilution refrigerator	< 30mK
Cryogenic Probestation „Kiutra L-Type Rapid“	< 100mK, H-Field < 5T
Test equipment
Keysight Semiconductor Parameter Analyzers	CV/IV device char., NVM char., device reliability
Keysight Vector Network Analyzer (on dedicated 300mm RF probestation)	RF IV, loadpull, parameter measurement up to 170 GHz
ProPlus FlickerNoise characterization system / AdMOS FlickerNoise characterization system	Flicker noise, 1/f noise, RTN char.
NI PXIe Systems optimized for Mixed-Signal Test	NVM array characterization
Aixacct "TF3000 FE" Polarization Analyzers	Ferroelectric polarization and switching studies
Infratec Lock-In Thermography camera	Failure localization and thermal characterization
HProbe "IBEX 3000" System on dedicated 300mm automatic wafer prober	MTJ device char., RH measurements, STT, SOT characterization
KLA/Capres CIPT	Characterizsation of magnetoresistance / tunneling resistance on MTJ stacks
High temperature storage cabinets	Temperature accelerated aging, data retention measuremnts, nitrogen purging available

300 mm Reinraum-Infrastruktur

300 mm Prozesskatalog