Fraunhofer Institute for Photonic MicrosystemsFerroelectric RAM (FRAM)
64-bit hafnium oxide-based FRAM demonstrator.
FRAM memories are a promising candidate for future non-volatile memory applications with ultra-low power consumption. At Fraunhofer IPMS, hafnium oxide-based ferroelectrics are therefore being investigated for their use in CMOS chip fabrication. A 64-bit hafnium oxide-based FRAM demonstrator was developed for the investigation, with an application-specific integrated circuit (ASIC). The system has an I²C interface enabling standard industrial tests for further investigation of key parameters: Storage property, storage duration and susceptibility to interference in memory matrices.
Properties of FRAM:
- Non-volatile memory
- Environmentally friendly, lead-free material
- CMOS compatible and scalable
- Fast read/write operations (in the nanosecond range)
- Low power consumption and voltage range
- 10 years storage reliability