Ferroelectric RAM (FRAM)

Ferroelectric RAM (FRAM)#

© Fraunhofer IPMS
64-bit hafnium oxide-based FRAM demonstrator.

FRAM memories are a promising candidate for future non-volatile memory applications with ultra-low power consumption. At Fraunhofer IPMS, hafnium oxide-based ferroelectrics are therefore being investigated for their use in CMOS chip fabrication. A 64-bit hafnium oxide-based FRAM demonstrator was developed for the investigation, with an application-specific integrated circuit (ASIC). The system has an I²C interface enabling standard industrial tests for further investigation of key parameters: Storage property, storage duration and susceptibility to interference in memory matrices.

 

Properties of FRAM:

  • Non-volatile memory
  • Environmentally friendly, lead-free material
  • CMOS compatible and scalable
  • Fast read/write operations (in the nanosecond range)
  • Low power consumption and voltage range
  • 10 years storage reliability