• High-k+metall-gate (HKMG) processes
• Random Telegraph Noise (RTN) / Reliability
• Negative capacitance field-effect transistor (NC-FET)
• Radio frequency (RF) characterization
Improvements of the deposition processes, the material properties and the integration schemes are essential to meet the stringent requirements for future components. An important challenge is the reduction of processing times for the high-k ALD deposition. For the semiconductor industry, the material ZrO2 is most interesting as a high- k dielectric in DRAM , eDRAM or resistive RAM. At Fraunhofer IPMS - CNT several high-k materials such as HfO2 , ZrO2 or Ta2O5 - based systems are currently being investigated.