If an organic semiconductor layer is deposited on such a substrate, the Si-bulk acts as gate electrode and controls the channel current between the gold electrodes on top. A suitably doped Si-SiO2 interface in CMOS quality guarantees a reproducible gate contact. Gold electrodes with a patented undercoating suppress the formation of injector barriers between the gold electrodes and the organics in the transistor channel. This guarantees reliable ohmic source / drain contacts in the OFET even for p-type semiconductors. Due to both reliability and reproducible preparation, these substrates are applied for standardized material screening by all key developers of organic semiconductors all over the world.