Fraunhofer IPMS Technologies

Fraunhofer IPMS develops technologies for the fabrication of MEMS and MOEMS products. Based upon these technologies, Fraunhofer IPMS offers pilot fabrication of complete MEMS and MOEMS products. Product-specific process modifications are also possible.

Simultaneously, Fraunhofer IPMS is also able to offer full-custom process technologies. Customized processes may be based on existing technologies, modified technologies, or specifically-developed technology modules.

Technology for Resonant MEMS Scanning Mirrors (AME75)

Hinge of a resonant, translationally-deflected MEMS scanning mirror
© Fraunhofer IPMS
Hinge of a resonant, translationally-deflected MEMS scanning mirror.

AME75 is a base technology developed at Fraunhofer IPMS for rotationally resonant MEMS scanning mirrors, which also have a horizontal/translational comb drive.

This technology is used for the fabrication of customized resonant MEMS scanning mirrors with rotational (one-and two-dimensional) and translational displacement, with a wide design range of parameters.

Website: Configurator for VarioS® microscanning mirrors

Technology for Quasi-Static MEMS Scanners (LinScan)

Vertical comb drive
© Fraunhofer IPMS
Vertical comb drive.

Our LinScan technology supports the fabrication of quasi-static MEMS scanners, which are used for example for 2D vector scanning applications and optical switches. To achieve quasi-static deflection, vertical comb drives are required. To fabricate vertical comb drives, a wafer with pillars is bonded to a wafer with horizontal ridges. The choice of suitable hinges in conjunction with the vertical comb drive results in the desired static pre-deflection.

Technology for Monolithically Integrated Micro-Mirror Arrays (EPSILON)

Cross section of a pixel consisting of CMOS backplane and mirror
© Fraunhofer IPMS
Cross section of a pixel consisting of CMOS backplane and mirror (16 µm pitch).

The technology C5090M supports the fabrication of monolithically integrated spatial light modulators.

This complex technology consists of the high-voltage CMOS process technology developed at the Fraunhofer IPMS, combined with a MEMS technology. The MEMS structures are fabricated on the CMOS using a sacrificial layer technology, after completion of the CMOS process.

Pressure Sensor Technology (SDE11)

Wafer with pressure sensors
© Fraunhofer IPMS
Wafer with pressure sensors.

SDE11 was developed at the Fraunhofer IPMS for the fabrication of piezoelectric gauge pressure sensors.

The low-leakage piezoelectric bridge is created on the pressure-sensitive mechanical membrane using electrically insulated polysilicon. For mechanical stability, the silicon chip is bonded to a glass wafer.


Spectral sensitivity of a photo diode
© Fraunhofer IPMS
Spectral sensitivity of a photo diode.

The photodiodes developed at the Fraunhofer IPMS – which have both diode and substrate terminals on the wafer front side – are characterized by low dark currents (typically 5 nA/mm² at 125 °C and 2.5 V). The combination of this photodiode technology with typical MEMS structures, such as cavities or slits in silicon, allows the development of specific optical measurement systems. The graph shows the spectral sensitivity of a photodiode, which was developed by Fraunhofer IPMS, based upon a specific customer's requirements.

Technology for Capacitive Micromechanical Ultrasonic Transducers (CMUTs)