300 mm Wafer Cleaning & Removal

Increased device performance and reliability in VLSI and ULSI silicon circuit technologies.

Wafer Cleaning

300 mm Screening Fab Services

Wafer Cleaning / Resist Removal

TEM images of metallization stack after TiN wet etch without (up) and with copper protection (down)
© Fraunhofer IPMS

TEM images of metallization stack after TiN wet etch without (up) and with copper protection (down)

Nanostructured sample before (left) and after photo resist removal (right).
© Fraunhofer IPMS

Nanostructured sample before (left) and after photo resist removal (right).

As the requirements for increased device performance and reliability have become more and more challenging in VLSI and ULSI silicon circuit technology, techniques to avoid contamination and processes to generate very clean wafer surfaces have become critically important. 

Many cleaning operations are necessary in the course of semiconductor manufacturing and must be performed at certain critical processing steps. To ensure a fast, selective, uniform and cost effective cleaning, the business unit CNT provides a state-of-the-art cleaning platform.

As a chain link between suppliers and fab we are able to screen, evaluate and optimize new chemicals and processes from laboratory scale up to testing on own 2x nm node test wafers.

 

Applications

2x nm technology node

From beaker test to 300 mm industry scale

PostEtchResidualRemoval (PERR)

Photoresist stripping

Lithography stack rework

Dual damascene metal hard mask etch

Bath life time evaluation

Consumable benchmarking

 

Advantages

Evaluation of new equipment and materials under industry standard conditions

AMAT Semitool Raider SP2 | DNS FC3000 and BREWER Science fl exible Labtool

Pre- and post-processing for optimization of individual process steps

Inline metrology

Professional contamination management

Professional IP management and licensing

Close connection to industry

Availability of patterned 300 mm short loop (M1/M2 dual damascene) test wafer

Wet Etch / Cleaning

WET ETCH    
dHF, HotPhos Oxide, Nitride etch FEoL
NH4OH Silicon etch FEoL
dHF Oxide etch BEoL

 

 

Cleaning     
SC1, SC2. dHF RCA clean FEoL
SPM, SOM, SOPM Resist strip, organic removal FEoL
All water based, solvent based cleaning chemicals Oxide etch FEoL

Analytical Services

Removal of passivation as well as top resist by novel phase fluids. No solvent treatment or plasma strip needed.
© Fraunhofer IPMS

Removal of passivation as well as top resist by novel phase fluids. No solvent treatment or plasma strip needed.

  • Surfscan wafer analysis (KLA Tencor SP2)
  • Patterned defect inspection (NextIn Aegis I)
  • Review SEM (Applied Materials G3 FIB)
  • 4-point resistivity measurement (KLA Tencor RS100)
  • Porosimetry (Semilab SOPRA EP5)
  • Ellipsometry (KLA Tencor FX100)
  • FIB-SEM, TEM (FEI Strata400 / FEI F20 (200 kV))
  • ToF SIMS (Ion ToF 300R)
  • Optical Microscope
  • Varian ATR-FTIR
  • AFM - Atomic force microscopy (Veeco Dimension™ X3D)
  • XPS - X-ray photoelectron spectroscopy (Thermo Fisher Scientific Theta 300i)